Integrated circuit devices and methods

US9543248B2 · kind B2 · utility

Assignee

• QUALCOMM Incorporated · US

Inventors

• Jeffrey Junhao Xu · San Diego, US
• Junjing Bao · Fishkill, US
• John Jianhong Zhu · San Diego, US
• Stanley Seungchul Song · San Diego, US
• Niladri Narayan Mojumder · San Diego, US
• Choh Fei Yeap · San Diego, US

Key dates

• Filing date: Aug 5, 2015
• Grant date: Jan 10, 2017
• Expiry date: Aug 5, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An integrated circuit device includes a first metal layer including aluminum. The integrated circuit device includes a second metal layer including an interconnect structure. The interconnect structure includes a layer of first material including aluminum. The integrated circuit device includes an inter-diffusion layer that includes aluminum. The inter-diffusion layer is proximate to the first metal layer and proximate to the layer of first material including aluminum. The integrated circuit device includes a self-forming barrier layer that includes aluminum. The self-forming barrier layer is proximate to a dielectric layer and proximate to the layer of first material including aluminum.