CMOS transistor, semiconductor device including the transistor, and semiconductor module including the device
US9543300B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2016 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Feb 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a CMOS transistor, a semiconductor device having the transistor, and a semiconductor module having the device. The CMOS transistor may include first and second interconnection structures respectively disposed in first and second regions of a semiconductor substrate. The first and second regions of the semiconductor substrate may have different conductivity types. The first and second interconnection structures may be disposed on the semiconductor substrate. The first interconnection structure may have a different stacked structure from the second interconnection structure. The CMOS transistor may be disposed in the semiconductor device. The semiconductor device may be disposed in the semiconductor module.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.