Semiconductor device structure and manufacturing method thereof
US9543439B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2015 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Jan 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
Abstract
Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a semiconductive substrate; a gate structure over a fin structure of the semiconductive substrate; a channel portion of the fin structure under the gate structure; and at least one epitaxy region disposed over the semiconductive substrate and in contact with the channel portion. The epitaxy region includes a substance with a first lattice constant larger than a second lattice constant of the semiconductive substrate; and a concentration profile of the substance in the epitaxy region being decreasing from near a bottom portion to near a top portion. The bottom portion is closer to the channel portion than the top portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.