Chin-I Liao
36Patents
9h-index
38Co-inventors
71Inventor score
Filing activity: Feb 24, 1999 → Aug 29, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| USD421650S | Electrical fan | General | 24 | Expired |
| US9123744B1 | Semiconductor device and method for fabricating the same | Electricity | 16 | Active |
| US8796695B2 | Multi-gate field-effect transistor and process thereof | Electricity | 14 | Active |
| US9450047B1 | Semiconductor structure having enlarged regrowth regions and manufacturing method of the same | Electricity | 14 | Active |
| US8647953B2 | Method for fabricating first and second epitaxial cap layers | Electricity | 13 | Active |
| US8754448B2 | Semiconductor device having epitaxial layer | Electricity | 12 | Active |
| US7736982B2 | Method for forming a semiconductor device | Electricity | 10 | Active |
| US7357686B2 | Boat propeller with adjustable blades for adjusting the pitch thereof | Performing Operations; Transporting | 9 | Active |
| US9337193B2 | Semiconductor device with epitaxial structures | Electricity | 9 | Active |
| US9006805B2 | Semiconductor device | Electricity | 8 | Active |
| US8674433B2 | Semiconductor process | Electricity | 7 | Active |
| US8710632B2 | Compound semiconductor epitaxial structure and method for fabricating the same | Electricity | 6 | Active |
| US9620503B1 | Fin field effect transistor and method for fabricating the same | Electricity | 5 | Active |
| US9070635B2 | Removing method | Electricity | 4 | Active |
| US9064893B2 | Gradient dopant of strained substrate manufacturing method of semiconductor device | Electricity | 4 | Active |
| US6139270A | Electric fan | Mechanical Engineering; Lighting; Heating | 4 | Expired |
| US8476169B2 | Method of making strained silicon channel semiconductor structure | Electricity | 3 | Active |
| US8440511B1 | Method for manufacturing multi-gate transistor device | Electricity | 3 | Active |
| US9614085B2 | Semiconductor structure having enlarged regrowth regions and manufacturing method of the same | Electricity | 2 | Active |
| US9112030B2 | Epitaxial structure and process thereof for non-planar transistor | Electricity | 2 | Active |
| US9543439B2 | Semiconductor device structure and manufacturing method thereof | Electricity | 1 | Active |
| US8928126B2 | Epitaxial layer | Electricity | 1 | Active |
| US8519390B2 | Test pattern for measuring semiconductor alloys using X-ray Diffraction | Electricity | 1 | Active |
| US7858529B2 | Treatment method of semiconductor, method for manufacturing MOS, and MOS structure | Electricity | 0 | Active |
| US8481391B2 | Process for manufacturing stress-providing structure and semiconductor device with such stress-providing structure | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.