Oxide sputtering target, and thin film transistor using the same
US9543444B2 · kind B2 · utility
6Cited by
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4Claims
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Key dates
| Filing date | Sep 16, 2014 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Sep 16, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.