Memory component, memory device, and method of operating memory device
US9543514B2 · kind B2 · utility
2Cited by
1References
12Claims
0Family size
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Key dates
| Filing date | Nov 24, 2015 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Nov 24, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.