Non-volatile logic device based on phase-change magnetic materials and logic operation method thereof
US9543955B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2015 |
| Grant date | Jan 10, 2017 |
| Priority date | — |
| Expiry date | Sep 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile logic device, including: a substrate, a magnetic head, a base electrode, an insulating layer, a phase-change magnetic film, and a top electrode. The substrate includes a silicon substrate and an active layer attached to the silicon substrate. The base electrode includes an N-type silicon layer, a P-type silicon layer and a heating layer, the N-type silicon layer and the P-type silicon layer constitute a PN diode structure, and the size of the heating layer is smaller than that of the P-type silicon layer. The phase-change magnetic film is deposited on the insulating layer and is electrically contacted with the heating layer. The top electrode and the base electrode are connected to an external electrical pulse signal, and an external magnetic field parallel to a two dimensional plane of the phase-change magnetic film is applied to the non-volatile logic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.