Manufacturing method for a semiconductor device, pattern generating method and nontransitory computer readable medium storing a pattern generating program
US9547743B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Jun 5, 2015 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | Jun 5, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2111/04
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, stepped structure is formed on a semiconductor substrate, a processing film is formed to cover the stepped structure, a resist film is formed on the processing film in such a manner as to be thinner at a higher portion of the stepped structure than at a lower portion of the same, and the resist film and the processing film are etched to flatten the processing film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.