Patent · US Active

Boost control to improve SRAM write operation

US9548104B1 · kind B1 · utility

14Cited by
19References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 30, 2015
Grant dateJan 17, 2017
Priority date
Expiry dateJun 30, 2035

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C8/10
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Approaches for providing write-assist boost for a Static Random Access Memory (SRAM) array are provided. A circuit includes a write driver of a Static Random Access Memory (SRAM) array. The circuit also includes a boost circuit that dynamically varies a write-assist boost voltage based on a stability assist setting applied to a wordline of the array.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.