Enhanced post-write read for 3-D memory
US9548105B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2015 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | Oct 29, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/1204
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Apparatus and method for performing a post-write read in a memory device are disclosed. A memory device may include 3-dimensional memory, with the wordlines in a memory block each having multiple strings. Periodically, the memory device may analyze the wordlines for defects by performing a post-write read on a respective wordline and analyzing the read data to determine whether the respective wordline is defective. Rather than reading all of the strings for the respective wordline, less than all of the strings (such as only one of the strings) for the respective wordline are read. In this way, determining whether the respective wordline in 3-dimensional memory may be performed more quickly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.