Resistive memory with program verify and erase verify capability
US9548116B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2014 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | Dec 27, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0078
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistive non-volatile memory cell is programmed. A programming voltage is applied to a first terminal of the resistive non-volatile memory cell. Sensing, during the applying the programming voltage, determines if the resistive non-volatile memory cell has been programmed. Current is limited through the resistive non-volatile memory cell to a first magnitude. After a predetermined time, if the sensing has not detected that the resistive non-volatile memory cell has been programmed, the current through the resistive non-volatile memory cell is limited to a second magnitude greater than the first magnitude. The resistive non-volatile memory cell is also erased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.