Inventor · Austin, TX, US

Michael A. Sadd

53Patents
13h-index
39Co-inventors
84Inventor score

Filing activity: Mar 14, 2000 → May 11, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US6686245B1 Vertical MOSFET with asymmetric gate structure Electricity 230 Expired
US6297095A Memory device that includes passivated nanoclusters and method for manufacture Electricity 142 Expired
US6320784A Memory cell and method for programming thereof Physics 102 Expired
US6413819B1 Memory device and method for using prefabricated isolated storage elements Electricity 61 Expired
US6706599B1 Multi-bit non-volatile memory device and method therefor Electricity 59 Expired
US6444545B1 Device structure for storing charge and method therefore Electricity 45 Expired
US9548116B2 Resistive memory with program verify and erase verify capability Physics 36 Active
US6400610B1 Memory device including isolated storage elements that utilize hole conduction and method therefor Electricity 30 Expired
US6307782A Process for operating a semiconductor device Physics 29 Expired
US7839681B2 Push-pull FPGA cell Physics 18 Active
US7692972B1 Split gate memory cell for programmable circuit device Physics 16 Active
US9520173B1 Magnetic random access memory (MRAM) and method of operation Physics 15 Active
US9640256B1 Nonvolatile static random access memory (NVSRAM) system having a static random access memory (SRAM) array and a resistive memory array Physics 15 Active
US8498140B2 Two-transistor floating-body dynamic memory cell Electricity 13 Active
US7456465B2 Split gate memory cell and method therefor Electricity 13 Active
US7906805B2 Reduced-edge radiation-tolerant non-volatile transistor memory cells Electricity 11 Active
US7517747B2 Nanocrystal non-volatile memory cell and method therefor Emerging Cross-Sectional Technologies 11 Active
US6855979B2 Multi-bit non-volatile memory device and method therefor Electricity 11 Expired
US9659623B1 Memory having a plurality of resistive non-volatile memory cells Physics 8 Active
US9697897B2 Memory device with combined non-volatile memory (NVM) and volatile memory Physics 6 Active
US10224088B1 Memory with a global reference circuit Physics 5 Active
US9779795B1 Magnetic random access memory (MRAM) and method of operation Physics 4 Active
US9613701B2 Ternary content addressable memory (TCAM) with programmable resistive elements Physics 4 Active
US7800164B2 Nanocrystal non-volatile memory cell and method therefor Emerging Cross-Sectional Technologies 4 Active
US7279997B2 Voltage controlled oscillator with a multiple gate transistor and method therefor Electricity 4 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.