Method of manufacturing a semiconductor device
US9548205B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2016 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | Mar 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device that reduces degradation of device properties includes forming an impurity region in a surface layer of a semiconductor substrate by ion injection; forming a transition metal layer in a surface of the impurity region; and exposing the semiconductor substrate with the transition metal layer formed thereon to a hydrogen plasma atmosphere formed by microwaves. The transition metal layer is heated and the heat is transferred from the transition metal layer to the impurity region to form an ohmic contact at the interface of the transition metal layer and the impurity region by reaction of the transition metal layer and the impurity region, and the impurity region is activated. When the substrate is a silicon carbide substrate, the ohmic contact is composed of a transition metal silicide and the impurity region, which is an ion injection layer, is activated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.