III-nitride based ESD protection device
US9548293B2 · kind B2 · utility
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3References
20Claims
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Key dates
| Filing date | Feb 14, 2014 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | Feb 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
An ESD (electrostatic discharge) protection device includes a first III-nitride p-i-n diode and a second III-nitride p-i-n diode connected to the first III-nitride p-i-n diode in an antiparallel arrangement configured to provide voltage clamping at 5V or less under forward bias of either the first or second III-nitride p-i-n diode for transient current in both forward and reverse directions. A corresponding method of manufacturing the ESD protection device is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.