Method including a formation of a control gate of a nonvolatile memory cell and semiconductor structure including a nonvolatile memory cell

US9548312B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Sven Beyer · Dresden, DE
• Alexander Ebermann · Dresden, DE
• Martin Schulze · Bad Kleinen, DE

Key dates

• Filing date: Nov 10, 2015
• Grant date: Jan 17, 2017
• Expiry date: Nov 10, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/035

Abstract

A method includes providing a semiconductor structure including a nonvolatile memory cell element and one or more electrically insulating layers covering the nonvolatile memory cell element. The nonvolatile memory cell element includes a source region, a channel region, a drain region and a floating gate over at least a first portion of the channel region. A first opening is formed in the electrically insulating layers over the floating gate, a control gate insulation layer is deposited, and a second opening is formed in the electrically insulating layers over the drain region. The first opening and the second opening are filled with an electrically conductive material. The electrically conductive material in the first opening provides a control gate of the nonvolatile memory cell element and the electrically conductive material in the second opening provides an electrical contact to the drain region.