Magnetoresistive structure having two dielectric layers, and method of manufacturing same
US9548442B2 · kind B2 · utility
15Cited by
7References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 12, 2015 |
| Grant date | Jan 17, 2017 |
| Priority date | — |
| Expiry date | Jul 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive structure having two dielectric layers, and method of manufacturing same, includes a free magnetic layer positioned between the two dielectric layers. The method of manufacture comprises at least two etch processes and at least an encapsulation process interposed therebetween wherein the encapsulation is formed on sidewalls of the partially formed magnetoresistive stack between etch processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.