Patent · US Active

Pattern forming method and resist composition

US9551935B2 · kind B2 · utility

1Cited by

1References

34Claims

0Family size

Assignee

FUJIFILM Corporation · JP

Inventors

Keita Kato · Shizuoka, JP
Shinji Tarutani · Uda, JP
Toru Tsuchihashi · Shizuoka, JP
Sou Kamimura · Shizuoka, JP
Yuichiro Enomoto · Uda, JP
Kana Fujii · Uda, JP
Kaoru Iwato · Shizuoka, JP
Shohei Kataoka · Yokohama, JP
Kazuyoshi Mizutani · Shizuoka, JP

Key dates

Filing date	Mar 25, 2011
Grant date	Jan 24, 2017
Priority date	—
Expiry date	Mar 25, 2031

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/24
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Provided is a method of forming a pattern, ensuring excellent exposure latitude (EL) and focus latitude (depth of focus DOF). The method of forming a pattern includes (A) forming a film from a resist composition, the resist composition, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent, thereby forming a negative pattern. The resist composition contains (a) a resin that is configured to decompose when acted on by an acid and ΔSP thereof represented by formula (1) below is 2.5 (MPa)1/2 or above, (b) a compound that is composed to generate an acid when exposed to actinic rays or radiation, and (c) a solvent.ΔSP=SPF−SPI (1)

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.