Patent · US Active

Backside redistribution layer (RDL) structure

US9553059B2 · kind B2 · utility

12Cited by

0References

20Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Po-Hao Tsai · Pingzhen District, TW
Jing-Cheng Lin · Baoshan, TW

Key dates

Filing date	Dec 20, 2013
Grant date	Jan 24, 2017
Priority date	—
Expiry date	Feb 3, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3512
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An embodiment package on package (PoP) device includes a molding compound having a metal via embedded therein, a passivation layer disposed over the molding compound, the passivation layer including a passivation layer recess vertically aligned with the metal via, and a redistribution layer bond pad capping the metal via, a portion of the redistribution layer bond pad within the passivation layer recess projecting above a top surface of the molding compound.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.