Reverse-conducting semiconductor device

US9553086B2 · kind B2 · utility

Assignee

• ABB Schweiz AG · CH

Inventors

• Liutauras Storasta · Lenzburg, CH
• Chiara Corvasce · Bergdietikon, CH
• Manuel Le-Gallo · Wallisellen, CH
• Munaf Rahimo · Uezwil, CH

Key dates

• Filing date: Jun 23, 2016
• Grant date: Jan 24, 2017
• Expiry date: Jun 23, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D12/481

Abstract

A Reverse-conducting semiconductor device which comprises a freewheeling diode and an insulated gate bipolar transistor on a common wafer, part of which wafer forms a base layer of a first conductivity type with a first doping concentration and a base layer thickness. The insulated gate bipolar transistor comprises a collector side and an emitter side opposite the collector side of the wafer. A cathode layer of a first conductivity type with at least one first region and a anode layer of a second conductivity type with at least one second and pilot region are alternately arranged on the collector side. Each region has a region area with a region width surrounded by a region border. The Reverse-conducting-IGBT of the present application satisfies a number of specific geometrical rules.