Semiconductor devices including source/drain regions having multiple epitaxial patterns
US9553190B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Mar 30, 2015 |
| Grant date | Jan 24, 2017 |
| Priority date | — |
| Expiry date | Apr 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an active pattern protruding from a substrate, a gate structure crossing over the active pattern, and source/drain regions disposed on the active pattern at opposite sides of the gate structure. Each of the source/drain regions includes a first epitaxial pattern contacting the active pattern and a second epitaxial pattern on the first epitaxial pattern. The first epitaxial pattern comprises a material having a lattice constant which is the same as that of the substrate, and the second epitaxial pattern comprises a material having a lattice constant greater than that of the first epitaxial pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.