Thin film transistor, thin film transistor array panel, and manufacturing method of thin film transistor
US9553201B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 12, 2014 |
| Grant date | Jan 24, 2017 |
| Priority date | — |
| Expiry date | Feb 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6757
Abstract
The inventive concept relates to a thin film transistor and a thin film transistor array panel and, in detail, relates to a thin film transistor including an oxide semiconductor. A thin film transistor according to an exemplary embodiment of the inventive concept includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a first semiconductor and a second semiconductor that overlap the gate electrode with the gate insulating layer interposed therebetween, the first semiconductor and the second semiconductor contacting each other; a source electrode connected to the second semiconductor; and a drain electrode connected to the second semiconductor and facing the source electrode, wherein the second semiconductor includes gallium (Ga) that is not included in the first semiconductor, and a content of gallium (Ga) in the second semiconductor is greater than 0 at. % and less than or equal to about 33 at. %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.