Monomer, hardmask composition including monomer, and method for forming pattern by using hardmask composition
US9556094B2 · kind B2 · utility
3Cited by
4References
15Claims
0Family size
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Key dates
| Filing date | Jun 4, 2013 |
| Grant date | Jan 31, 2017 |
| Priority date | — |
| Expiry date | Jun 4, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/11
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed are a monomer represented by the following Chemical Formula 1 for a hardmask composition, a hardmask composition including the monomer, and a method of forming patterns using the hardmask composition.In the above Chemical Formula 1,A1 to A3, X1 to X3, L1, L2, n and m are the same as described in the detailed description.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.