Copper barrier chemical-mechanical polishing composition

US9556363B2 · kind B2 · utility

Assignee

• Cabot Microelectronics Corporation · US

Inventors

• Lin Fu · Niskayuna, US
• Steven Grumbine · Aurora, US
• Jeffrey Dysard · McLeansboro, US
• Wei Weng · Naperville, US
• Lei Liu · Thousand Oaks, US
• Alexei P. Leonov · Gilbert, US

Key dates

• Filing date: Jun 25, 2015
• Grant date: Jan 31, 2017
• Expiry date: Jun 25, 2035

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C09K13/00
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

A chemical-mechanical polishing composition includes colloidal silica abrasive particles having a chemical compound incorporated therein. The chemical compound may include a nitrogen-containing compound such as an aminosilane or a phosphorus-containing compound. Methods for employing such compositions include applying the composition to a semiconductor substrate to remove at least a portion of at least one of a copper, a copper barrier, and a dielectric layer.