Method of measuring thermal electric characteristics of semiconductor device
US9557368B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2012 |
| Grant date | Jan 31, 2017 |
| Priority date | — |
| Expiry date | Sep 21, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/44
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure relates to a method for measuring thermal electric characteristics of a semiconductor device, including the steps of: providing at least one current to the LED device over a time interval; recording a voltage transient response of the LED device, wherein the voltage transient response has a plurality of time segments different in gradient; computing a voltage difference from one of the plurality of time segments in the voltage transient response; and determining whether the LED device is defective based on the voltage difference, wherein the voltage difference is thermal dependent. The present disclosure also provides a testing method for defining a plurality of time segments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.