Photoresist composition and associated method of forming an electronic device
US9557642B2 · kind B2 · utility
4Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2015 |
| Grant date | Jan 31, 2017 |
| Priority date | — |
| Expiry date | Aug 24, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08F220/382
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoresist composition includes a first polymer in which at least half of the repeat units are photoacid-generating repeat units, and a second polymer that exhibits a change in solubility in an alkali developer under the action of acid. In the first polymer, each of the photoacid-generating repeat units comprises photoacid-generating functionality and base-solubility-enhancing functionality.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.