Method of manufacturing fin diode structure
US9559091B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2015 |
| Grant date | Jan 31, 2017 |
| Priority date | — |
| Expiry date | Jun 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a fin diode structure includes providing a substrate, forming a doped well in said substrate, forming at least one doped region of first conductivity type or at least one doped region of second doped type in said doped well, performing an etching process to said doped region of first conductivity type or said doped region of second conductivity type to form a plurality of fins on said doped region of first conductivity type or on said doped region of second conductivity type, forming shallow trench isolations between said fins, and performing a doping process to said fins to form fins of first conductivity type and fins of second conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.