Apparatus and method for FinFETs
US9559099B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2014 |
| Grant date | Jan 31, 2017 |
| Priority date | — |
| Expiry date | Jul 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A FinFET device comprises an isolation region in a substrate, wherein the isolation region comprises a plurality of non-vertical sidewalls, a first V-shaped groove, a second V-shaped groove and a third V-shaped groove formed in the substrate, a first cloak-shaped active region over the first V-shaped groove, wherein a top surface of the first cloak-shaped active region comprises a first slope, a second cloak-shaped active region over the second V-shaped groove, wherein a top surface of the second cloak-shaped active region is triangular in shape and a third cloak-shaped active region over the third V-shaped groove, wherein a top surface of the third cloak-shaped active region comprises a second slope.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.