Manufacturing method of using hydrogen plasma processing on a semiconductor wafer
US9559141B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2015 |
| Grant date | Jan 31, 2017 |
| Priority date | — |
| Expiry date | Aug 18, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
Hydrogen plasma processing is performed on a semiconductor wafer having a wiring formed in a region except a photodiode formation region of a pixel part and in a peripheral circuit part, from the side of a face where the wiring is formed. The hydrogen plasma processing uses a plasma etching apparatus which applies high-frequency power to an upper electrode for exciting hydrogen plasma and applies high-frequency power to a lower electrode for supplying hydrogen ions existing in the hydrogen plasma to the semiconductor wafer by electric field drift. Thereby, in the photodiode formation region of the pixel part, hydrogen ions become likely to be supplied by the electric field drift, and, in the region except the photodiode formation region and in the peripheral circuit part, the wiring restricts the movement of hydrogen ions and hydrogen ions become difficult to be supplied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.