Phase-change memory cell implant for dummy array leakage reduction

US9559146B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Lequn Liu · Boise, US
• Ugo Russo · Boise, US
• Max Hineman · Boise, US

Key dates

• Filing date: Dec 23, 2014
• Grant date: Jan 31, 2017
• Expiry date: Dec 23, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

Embodiments of the present disclosure describe phase-change memory cell implant for dummy array leakage reduction. In an embodiment, an apparatus includes a plurality of phase-change memory (PCM) elements, wherein individual PCM elements of the plurality of PCM elements are dummy cells including a bottom electrode layer, a select device layer disposed on the bottom electrode layer, a middle electrode layer disposed on the select device layer, a phase-change material layer disposed on the middle electrode layer, and a top electrode layer disposed on the phase-change material layer, wherein the phase-change material layer is doped with an impurity to reduce cell leakage of the dummy cells. Other embodiments may be described and/or claimed.