Patent · US Active

Method for manufacturing a semiconductor structure and semiconductor component comprising such a semiconductor structure

US9559256B2 · kind B2 · utility

3Cited by

1References

12Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Benoît Amstatt · Grenoble, FR
Bruno Daudin · Grenoble, FR

Key dates

Filing date	Jun 19, 2014
Grant date	Jan 31, 2017
Priority date	—
Expiry date	Jun 19, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/821
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for manufacturing at least one semiconductor structure, and a component including a structure formed with the method, the method including: providing a substrate including at least one semiconductor silicon surface; forming an amorphous silicon carbide layer in contact with at least one part of the semiconductor silicon surface; forming the at least one semiconductor structure in contact with the silicon carbide layer, the structure including at least one part, as a contact part, in contact with the surface of the silicon carbide layer, which includes gallium.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.