Benoît Amstatt
18Patents
3h-index
15Co-inventors
49Inventor score
Filing activity: Oct 25, 2013 → Apr 29, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10651341B2 | Optoelectronic device and method for manufacturing same | Emerging Cross-Sectional Technologies | 3 | Active |
| US10424692B2 | Optoelectronic device comprising three-dimensional electroluminescent diodes emitting at different wavelengths | Emerging Cross-Sectional Technologies | 3 | Active |
| US9559256B2 | Method for manufacturing a semiconductor structure and semiconductor component comprising such a semiconductor structure | Electricity | 3 | Active |
| US9698011B2 | Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps | Electricity | 2 | Active |
| US10636653B2 | Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps | Electricity | 2 | Active |
| US9899566B2 | Optoelectronic device comprising microwires or nanowires | Emerging Cross-Sectional Technologies | 2 | Active |
| US9679966B2 | Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device | Emerging Cross-Sectional Technologies | 2 | Active |
| US9991342B2 | Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device | Emerging Cross-Sectional Technologies | 2 | Active |
| US10153399B2 | Optoelectronic device comprising semiconductor elements and its fabrication process | Electricity | 1 | Active |
| US9728679B2 | Optoelectronic device and method for manufacturing same | Emerging Cross-Sectional Technologies | 1 | Active |
| US11563147B2 | Optoelectronic device comprising three-dimensional light-emitting diodes | Electricity | 0 | Active |
| US12074191B2 | Optoelectronic device with light-emitting diodes a doped region of which incorporates an external segment based on aluminium and gallium nitride | Electricity | 0 | Active |
| US10340138B2 | Electronic device with a wire element extending from an electroconductive layer comprising zirconium carbide or hafnium carbide | Emerging Cross-Sectional Technologies | 0 | Active |
| US9331242B2 | Optoelectronic device and method for manufacturing same | Emerging Cross-Sectional Technologies | 0 | Active |
| US10886427B2 | Optoelectronic device comprising three-dimensional diodes | Electricity | 0 | Active |
| US10026870B2 | Optoelectronic device having semiconductor elements | Emerging Cross-Sectional Technologies | 0 | Active |
| US11894413B2 | Method for producing an optoelectronic device comprising light-emitting diodes which are homogeneous in dimensions | Electricity | 0 | Active |
| US10801129B2 | Nucleation structure suitable for epitaxial growth of three-dimensional semiconductor elements | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.