Ultra-low voltage temperature threshold detector
US9559665B2 · kind B2 · utility
1Cited by
7References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 30, 2015 |
| Grant date | Jan 31, 2017 |
| Priority date | — |
| Expiry date | Jun 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B10/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An integrated circuit die includes a plurality of transistors formed in a semiconductor substrate, the body regions of the transistors on a doped well region of the semiconductor substrate. A threshold detector selectively applies either a first voltage or second voltage to the doped well region based on whether the temperature of the semiconductor substrate is above or below a threshold temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.