Based sampling and binning for yield critical defects
US9563943B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2016 |
| Grant date | Feb 7, 2017 |
| Priority date | — |
| Expiry date | Apr 6, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Methods and systems for design based sampling and binning for yield critical defects are provided. One method includes aligning each image patch in each inspection image frame generated for a wafer by an optical subsystem of an inspection system to design information for the wafer. The method also includes deriving multiple layer design attributes at locations of defects detected in the image patches. In addition, the method includes building a decision tree with the multiple layer design attributes. The decision tree is used to separate the defects into bins with different yield impacts on a device being formed on the wafer. The method also includes binning the defects with the decision tree.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.