Manufacturing method and apparatus for manufacturing silicon carbide epitaxial wafer
US9564315B1 · kind B1 · utility
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Key dates
| Filing date | Apr 5, 2016 |
| Grant date | Feb 7, 2017 |
| Priority date | — |
| Expiry date | Apr 5, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/20
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A manufacturing method for manufacturing a silicon carbide epitaxial wafer includes: introducing a cleaning gas into a growth furnace to remove dendrite-like polycrystal of silicon carbide attached to an inner wall of the growth furnace; after introducing the cleaning gas, bringing a silicon carbide substrate in the growth furnace; and growing a silicon carbide epitaxial layer on the silicon carbide substrate by introducing a processing gas into the growth furnace to manufacture a silicon carbide epitaxial wafer, wherein the cleaning gas having fluid energy of 1.6E-4 [J] or higher is introduced into the growth furnace.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.