Methods of forming a pattern and devices formed by the same
US9564324B2 · kind B2 · utility
0Cited by
5References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2014 |
| Grant date | Feb 7, 2017 |
| Priority date | — |
| Expiry date | Oct 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The inventive concepts provide methods of forming a pattern. In the method, a block copolymer layer may be formed on a neutral layer having an uneven structure and then phase separation is induced. The neutral layer may have an affinity for all of a hydrophilic polymer and a hydrophobic polymer, so that vertical cultivation of phases of the block copolymer may be realized on the uneven structure. Thus, a self-assembled phenomenon may be induced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.