Polishing liquid and method for polishing substrate using the polishing liquid
US9564337B2 · kind B2 · utility
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2References
7Claims
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Key dates
| Filing date | Dec 22, 2011 |
| Grant date | Feb 7, 2017 |
| Priority date | — |
| Expiry date | Dec 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a polishing liquid including cerium oxide particles, an organic acid A, a polymer compound B having a carboxyl acid group or a carboxylate group, and water, wherein the organic acid A has at least one group selected from the group consisting of —COOM group, -Ph-OM group, —SO3M group and —PO3M2 group, pKa of the organic acid A is less than 9, a content of the organic acid A is 0.001 to 1 mass % with respect to the total mass of the polishing liquid, and a content of the polymer compound B is 0.01 to 0.50 mass % with respect to the total mass of the polishing liquid, and pH is in the range of 4.0 to 7.0.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.