Etch resistant alumina based coatings
US9564339B2 · kind B2 · utility
2Cited by
2References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2010 |
| Grant date | Feb 7, 2017 |
| Priority date | — |
| Expiry date | Mar 29, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76898
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method of forming a protective hard mask layer on a substrate in a semiconductor etch process, comprising the step of applying by solution deposition on the substrate a solution or colloidal dispersion of an alumina polymer, said solution or dispersion being obtained by hydrolysis and condensation of monomers of at least one aluminum oxide precursor in a solvent or a solvent mixture in the presence of water and a catalyst. The invention can be used for making a hard mask in a TSV process to form a high aspect ratio via a structure on a semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.