Method of manufacturing semiconductor device
US9564340B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2015 |
| Grant date | Feb 7, 2017 |
| Priority date | — |
| Expiry date | Dec 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming a plurality of active fins over a semiconductor substrate, sequentially forming first and second hard mask layers over the active fins, forming a first hard mask pattern by etching the second hard mask layer, trimming the first hard mask pattern to form a trimmed hard mask pattern, forming a first photo resist pattern over the first hard mask layer, forming second hard mask patterns by etching the first hard mask layer by using the trimmed hard mask pattern and the first photo resist pattern as an etching mask, and forming active fin patterns by etching the active fins by using the second hard mask patterns as an etching mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.