Substrate processing method and method of manufacturing semiconductor device
US9564360B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2016 |
| Grant date | Feb 7, 2017 |
| Priority date | — |
| Expiry date | May 25, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/56
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object of the present invention is to provide a method which enable a material to be fully embedded into a recess portion with a deposition film left in the recess portion. A method in one embodiment comprises: a first irradiation step of irradiating a deposition film formed on an opening portion of a recess portion in a substrate with a particle beam in a direction at a first angle with respect to a substrate in-plane direction, to remove part of the deposition film in a thickness direction; and a second irradiation step of, after the first irradiation step, irradiating the deposition film with the particle beam in a direction at a second angle which is closer to perpendicular to the substrate in-plane direction than the first angle is, to remove part of the remaining deposition film in the thickness direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.