Low-K dielectric layer and porogen
US9564383B2 · kind B2 · utility
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2References
20Claims
0Family size
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Key dates
| Filing date | Jun 8, 2015 |
| Grant date | Feb 7, 2017 |
| Priority date | — |
| Expiry date | Jun 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system and method for a low-k dielectric layer are provided. A preferred embodiment comprises forming a matrix and forming a porogen within the matrix. The porogen comprises an organic ring structure with fewer than fifteen carbons and a large percentage of single bonds. Additionally, the porogen may have a viscosity greater than 1.3 and a Reynolds numbers less than 0.5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.