Patent · US Active

Magnetic shielding of perpendicular STT-MRAM

US9564403B2 · kind B2 · utility

7Cited by

1References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Robert Allinger · Unterhaching, DE
Karl Hofmann · Munich, DE
Klaus Knobloch · Radeberg, DE
Robert Strenz · Radebeul, DE

Key dates

Filing date	Sep 27, 2013
Grant date	Feb 7, 2017
Priority date	—
Expiry date	Sep 27, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A memory having an array of perpendicular spin-transfer torque (STT) magnetic random access memory (MRAM) cells, wherein each cell has a magnetic layer stack. A magnetic shield disposed between the cells and having a minimum height of at least the height of the magnetic layer stacks.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.