Substrate opening formation in semiconductor devices
US9564405B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2016 |
| Grant date | Feb 7, 2017 |
| Priority date | — |
| Expiry date | May 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Radio-frequency (RF) devices are fabricated by providing a field-effect transistor (FET) formed over an oxide layer, forming one or more electrical connections to the FET, forming one or more dielectric layers over at least a portion of the electrical connections, electrically coupling an electrical element to the FET via the one or more electrical connections, disposing a handle wafer layer on at least a portion of the one or more dielectric layers, the handle wafer layer being at least partially over the electrical element; and removing at least a portion of the handle wafer layer to form an opening exposing at least a portion of the electrical element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.