Transistor with elevated drain termination

US9564498B2 · kind B2 · utility

Assignee

• Infineon Technologies Americas Corp. · US

Inventors

• Michael A. Briere · West Greenwich, US
• Reenu Garg · Torrance, US

Key dates

• Filing date: Jun 25, 2015
• Grant date: Feb 7, 2017
• Expiry date: Jun 25, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

According to an exemplary implementation, a transistor includes drain finger electrodes interdigitated with source finger electrodes. The transistor also includes a current conduction path in a semiconductor substrate between the drain finger electrodes and the source finger electrodes. At least one of the drain finger electrodes has a drain finger electrode end and a drain finger electrode main body, where the drain finger electrode main body is non-coplaner with at least a portion of the drain finger electrode end. The transistor may also include a dielectric material situated between at least a portion of the drain finger electrode end and the semiconductor substrate. The dielectric material can be an increasing thickness dielectric material. The dielectric material can thus elevate the drain finger electrode end over the semiconductor substrate. Further, the drain finger electrode end can have an increased radius of curvature.