Magnetoresistive effect devices having enhanced magnetic anisotropy
US9564581B1 · kind B1 · utility
6Cited by
8References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 20, 2015 |
| Grant date | Feb 7, 2017 |
| Priority date | — |
| Expiry date | Nov 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure generally relate to memory devices having enhanced perpendicular magnetic anisotropy. The memory device includes a plurality of first leads, a plurality of second leads, and a plurality of memory cells having a plurality of magnetic layers and a tunneling barrier layer. An interfacial layer is incorporated in each memory cell between one of the magnetic layers and the tunneling barrier layer to enhance perpendicular magnetic anisotropy, while preserving high tunneling magnetoresistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.