Plasma apparatus, magnetic-field controlling method, and semiconductor manufacturing method
US9567668B2 · kind B2 · utility
1Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2014 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | May 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3458
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of a plasma apparatus are provided. The plasma apparatus includes a processing chamber and a wafer chuck disposed in the processing chamber. The plasma apparatus also includes a target element located over the wafer chuck and an electromagnet array located over the target element and having a number of electromagnets. Some of the electromagnets in a magnetic-field zone of the electromagnet array are enabled to generate a magnetic field adjacent to the target element. The magnetic-field zone is moved during a semiconductor manufacturing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.