Silicon single crystal manufacturing apparatus and silicon single crystal manufacturing method
US9567692B2 · kind B2 · utility
1Cited by
1References
7Claims
0Family size
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Key dates
| Filing date | Apr 3, 2013 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Jun 14, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1008
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The distance between the heat shield and the melt level of the melt can be regulated in a high precision. The real image includes at least the circular opening of the heat shield provided in such a way that the heat shield covers a part of the melt level of the silicon melt. The mirror image is a reflected image of the heat shield on the surface of the silicon melt. Based on the distance between the obtained real image and the mirror image, the melt level position of the silicon melt is computed, and the distance between the heat shield and the melt level position is regulated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.