Magnetic memory cells with fast read/write speed
US9570138B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2016 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Feb 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Memory cells and methods for forming a memory cell are presented. The memory cell includes a storage unit and a selector unit. The storage unit includes a magnetic storage element with first and second storage terminals and a bitline coupled to the second storage terminal. The selector unit includes a first selector and a second selector. The first selector may be a tunneling select transistor or a metal oxide semiconductor select transistor. The second tunneling select transistor is configured to have a second unidirectional current flow between its source and drain terminals. The second selector serves at least as a read selector for read operations of the memory cell and a read current is in the direction of the second unidirectional current flow between the source drain terminals of the second selector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.