Semiconductor substrates and methods for processing semiconductor substrates
US9570291B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2015 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Jul 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/402
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor substrates and methods for processing semiconductor substrates are provided. A method for processing a semiconductor substrate includes providing a semiconductor substrate having an outer edge, a central region, and a peripheral region between the outer edge and the central region. The semiconductor substrate also has an upper surface. The method includes forming an amorphous material over the upper surface of the semiconductor substrate in the peripheral region. Also, the method includes irradiating the upper surface of the semiconductor substrate, wherein the amorphous material inhibits cracking at the outer edge of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.