Method of forming regions with hot and cold implants
US9570308B2 · kind B2 · utility
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2References
8Claims
0Family size
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Key dates
| Filing date | Dec 14, 2015 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Dec 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes: implanting a first species into a substrate at a cold temperature to form a first region; and implanting a second species into the substrate at a hot temperature to form a second region that is adjacent to the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.