Rinsing solution to prevent TiN pattern collapse
US9570343B2 · kind B2 · utility
3Cited by
2References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 21, 2013 |
| Grant date | Feb 14, 2017 |
| Priority date | — |
| Expiry date | Jun 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is a new formulation and process for treating TiN semiconductor devices having a high aspect ratio structure formed thereon. The new composition is designed to be used in the chip making process between cleaning a wet etched memory device and its final rinse/drying process. It is intended to include the treatment in order to prevent collapse of the high aspect ratio TiN structure found on the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.